? 2015 ixys corporation, all rights reserved ds100647b(5/15) x-class hiperfet tm power mosfet ixfa24n60x IXFP24N60X ixfq24n60x ixfh24n60x v dss = 600v i d25 = 24a r ds(on) ? ? ? ? ? 175m ? ? ? ? ? symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 600 v v gs(th) v ds = v gs , i d = 2.5ma 2.5 4.5 v i gss v gs = ? 30v, v ds = 0v ??????????????????????? 100 na i dss v ds = v dss , v gs = 0v 20 ? a t j = 125 ? c 750 ? a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 175 m ? symbol test conditions maximum ratings v dss t j = 25 ? c to 150 ? c 600 v v dgr t j = 25 ? c to 150 ? c, r gs = 1m ? 600 v v gss continuous ? 30 v v gsm transient ? 40 v i d25 t c = 25 ? c24a i dm t c = 25 ? c, pulse width limited by t jm 48 a i a t c = 25 ? c8a e as t c = 25 ? c 500 mj dv/dt i s ? i dm , v dd ? v dss , t j ? 150c 50 v/ns p d t c = 25 ? c 400 w t j -55 ... +150 ? c t jm 150 ? c t stg -55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb m d mounting torque (to-220, to-3p & to-247) 1.13 / 10 nm/lb.in weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g g = gate d = drain s = source tab = drain to-247 (ixfh) g s d d (tab) d (tab) to-3p (ixfq) d g s d (tab) to-220ab (ixfp) s d g to-263 aa (ixfa) g s d (tab) preliminary technical information n-channel enhancement mode avalanche rated fast intrinsic diode features ? international standard packages ? low r ds(on) and q g ? avalanche rated ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? switch-mode and resonant-mode power supplies ? dc-dc converters ? pfc circuits ? ac and dc motor drives ? robotics and servo controls
ixys reserves the right to change limits, test conditions, and dimensions. ixfa24n60x IXFP24N60X ixfq24n60x ixfh24n60x note 1. pulse test, t ? 300 ? s, duty cycle, d ?? 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065b1 6,683,344 6,727,585 7,005,734b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123b1 6,534,343 6,710,405b2 6,759,692 7,063,975b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728b1 6,583,505 6,710,463 6,771,478b2 7,071,537 source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v 24 a i sm repetitive, pulse width limited by t jm 96 a v sd i f = i s , v gs = 0v, note 1 1.4 v t rr 140 ns q rm 840 ???????????? nc i rm 12 a i f = 12a, -di/dt = 100a/ s v r = 100v preliminary technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 7 12 s r gi gate input resistance 2.1 ? c iss 1910 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 1400 pf c rss 18 pf c o(er) 100 pf c o(tr) 330 pf t d(on) 18 ns t r 29 ns t d(off) 45 ns t f 15 ns q g(on) 47 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 11 nc q gd 23 nc r thjc 0.31 ? c/w r thcs to-220 0.50 ? c/w to-247 & to-3p 0.25 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 5 ? (external) effective output capacitance energy related time related v gs = 0v v ds = 0.8 ? v dss
? 2015 ixys corporation, all rights reserved ixfa24n60x IXFP24N60X ixfq24n60x ixfh24n60x fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 5v 9v fig. 3. output characteristics @ t j = 125oc 0 4 8 12 16 20 24 01234567891011 v ds - volts i d - amperes v gs = 10v 9v 5v 6v 7v 8v fig. 4. r ds(on) normalized to i d = 12a value vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 24a i d = 12a fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0 4 8 12 16 20 24 28 32 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v fig. 5. r ds(on) normalized to i d = 12a value vs. drain current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 8 16 24 32 40 48 56 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 28 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfa24n60x IXFP24N60X ixfq24n60x ixfh24n60x fig. 7. input admittance 0 5 10 15 20 25 30 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 2 4 6 8 10 12 14 16 18 20 22 0 4 8 121620242832 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 0.40.50.60.70.80.91.01.11.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v gs - volts v ds = 300v i d = 12a i g = 10ma fig. 11. capacitance 1 10 100 1,000 10,000 1 10 100 1000 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.01 0.1 1 10 100 10 100 1,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds( on ) limit 10ms dc
? 2015 ixys corporation, all rights reserved ixys ref: f_24n60x(j6) 5-20-15-a ixfa24n60x IXFP24N60X ixfq24n60x ixfh24n60x fig. 14. maximum transient thermal impedance 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. output capacitance stored energy 0 2 4 6 8 10 12 14 16 18 0 100 200 300 400 500 600 v ds - volts e oss - microjoules
ixys reserves the right to change limits, test conditions, and dimensions. ixfa24n60x IXFP24N60X ixfq24n60x ixfh24n60x to-3p outline e ?? p to-247 outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-220 outline pins: 1 - gate 2 - drain 3 - source to-263 outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 1. gate 2. drain 3. source 4. drain 1. gate 2. drain 3. source 4. drain
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